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| Product Specification Silicon NPN Power Transistor 2SC3720 DESCRIPTION *High Collector-Emitter Breakdown Voltage: V(BR)CEO= 800V (Min) *High Switching Speed *Wide Area of Safe Operation APPLICATIONS *Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB B Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature 5 A PC 200 W Tj 175 Tstg Storage Temperature Range -65~175 Websitewww.jmnic.com Product Specification Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3720 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 800 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 2.0 V hFE DC Current Gain IC= 4A; VCE= 5V 6 20 ICBO Collector Cutoff Current VCB= 1000V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 0.1 mA Switching Times ton Turn-On Time IC= 4A; IB1= 0.8A; IB2= -1.6A; VCC= 250V 1.0 s tstg Storage Time 3.5 s tf Fall Time 0.3 s Websitewww.jmnic.com |
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